< BK21+ BEST Seminar Series Announcement> 

Time and Date : 16:00 ~ 17:00 Monday 09/17/2018

Place : D403, Engineering Building #4

Title : InGaAs MOSFETs for Logic Application

Abstract:

Since early 2000s, indium-rich InxGa1-xAs material system has re-gained its interest, and now stands out as the most promising non-Si n-channel material for next-generation low-power and high-speed nano-scale CMOS for logic applications. This is a consequence of its superior electron carrier transport properties. The room temperature electron mobility of InGaAs is easily in excess of 10,000 cm2/V-sec, depending on indium composition and/or strain. This makes InGaAs very attractive for many different kinds of transistor applications. However, all the efforts on early generation of III-V MOSFETs failed to exhibit accumulation and/or inversion carriers in the channel, due to poor interface state quality between oxide and III-V channel. This makes it challenging to realize a III-V MOSFET for the past 3 decades. Recently, significant progress has been made on a variety of GaAs and InGaAs MOSFETs for several years by using Atomic-Layer-Deposition, so called ALD. This is attributed to excellent interface quality between high-k dielectric and InGaAs channel by ALD. Indeed, many different groups have reported such progresses. In this talk, we review recent progress on InGaAs quantum-well MOSFETs.

Presenter: Tae-Woo Kim, Professor / UNIST

Host: Prof. Kim, Hyung-Jun, Yonsei EEE