Prof. Hyun Jae Kim’s research team reported “Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors“ on ACS Applied Materials & Interfaces (Impact Factor: 8.758 , JCR 10.35%).
This paper is a study on improving the electrical properties and stability of oxide thin film transistors. This study is significant in that it can be applied as a technology to implement transistors to be used in a high-resolution display backplane. This paper was guided by Prof. Hyun Jae Kim (contact author) and led by graduated student Chan Sic Yoon (first author).