Jae Hun Kim of Professor Ilgu Yun's research team (Semiconductor Engineering Laboratory) has developed a gallium nitride (GaN)-based light-emitting transistor.

The developed device is the world's first light emitting transistor with a metal-insulator-semiconductor (MIS) gate structure, possessing both innovation and potential.

It was published in November of 2024 in ACS Applied Electronic Materials (IF: 4.5, top 20.2% in JCR).

(Title: A Monolithically Integrated GaN-based Light Emitting Transistor with a High On/Off ratio and Low Gate Leakage Current)