< BK21 플러스 BEST 정보기술 사업단 세미나 개최 안내 >

개최일시 : 2016년 11월 01일 화요일 11:00 ~ 12:00

개최장소 : 제2공학관 B701호

세미나 제목 : VLSI Design Based on Carbon Nanotube Field Effect Transistor(CNTFET)

발표초록 :                                                                                                                             

Over the past few decades there has been an increased focus on scaling down the size of transistors in CMOS circuits to improve the speed of  devices and density of devices on a given chip. As the physical gate length is reduced to below 25 nm, many device-level effects such as large parametric variations and exponential increase in leakage current have substantially affected the I-V characteristics of traditional MOSFETs, thus resulting in major concerns for scaling down the feature size of these devices. A possible approach to meet the challenges of nano scale CMOS consists of utilizing new circuit techniques together with alternative technologies to replace conventional MOSFET-based technology. This presentation will go over the challenging issues of the current nanoscale integrated circuit design issues and present possible solutions based on emerging nanoscale device technology.

강연자 : Prof. Yong-Bin kim / Northeastern University

초청자 : 전기전자공학과 교수 김재석