< BK21+ BEST Seminar Series Announcement> 

Time and Date : 16:00 ~ 17:00 Thursday 12/12/2019

Place : A432, Engineering Building #1

Title : Atomic Crafts: Various Approaches for Achieving Area-Selective Deposition
Abstract:
As the Si-based semiconductor industry goes into the sub-10 nm scale of its physical limit, conventional patterning processes, based on photolithography and etching, are facing fundamental limits for device downscaling. Accordingly, the deposition of atoms at specific locations on a desired surface, called atomic craft, can boost advances in catalysis, energy harvesting as well as semiconductor device fabrication. Of several paths being explored for novel nanopatterning toward the atomic craft, area-selective atomic layer deposition (AS-ALD) is attracting increasing interest because of its ability to enable both continued dimensional scaling and accurate pattern placement for next-generation nanoelectronics. In this talk, we first explore general approaches and fundamental limitation of AS-ALD using self-assembled monolayers (SAMs). Accordingly, new opportunities can be opened up through development of alternative AS-ALD methods. In some efforts being pioneered, we introduce a topographical AS-ALD method using anisotropic ion implantation (with fluorocarbon implantation). Then, we further introduce the most recent works for new alternative AS-ALD methods by selective precursor adsorption (with aminosilane inhibitors on SiO2 surface) or by selective reactant adsorption (with catalytic oxygen activation on noble metal surfaces). The efficacy of these alternative approaches shows promise for some of metal and oxide ALD systems. Lastly, we review recent efforts for enabling selectivity improvement by implementing various process correction steps. In summary, we expect that continuous efforts advance practical applications that require area-selective coating of surfaces in a variety of nanostructures.

Presenter: Prof. Kim, Woohee / Hanyang University 

Host: Prof. Kim, Hyungjune, Yonsei EEE