Yong Seon Hwang and Hye Jin Son, co-first authors from Prof. Hyun Jae Kim’s research team, published their paper, “Scaling Challenges and Engineering Approaches for Oxide Semiconductor FETs Toward Display and Memory Systems,” in Nanoscale (Impact Factor: 5.2). (2026.06.16. Accepted)

This work reviews channel-scaling challenges in oxide-semiconductor FETs for next-generation display and memory systems. The research team analyzed defect formation and device degradation mechanisms during scaling and proposed multidimensional device architectures and engineering strategies, providing a roadmap for future oxide electronics.