In October, oxide semiconductor-based visible light phototransistor developed by Dr. Hyukjoon Yoo, a graduate of Professor Hyun Jae Kim's research team, was accepted in Applied Physics Letters (IF 3.971, JCR top 30.75%). This study was conducted to confirm whether a transparent phototransistor can detect visible light by applying a porous PTFE and plasma engineering technology to form a sub-gap state in the IGZO channel layer. (Article title: Enhancement of visible light detection for indium–gallium–zinc oxide-based transparent phototransistor via application of porous-structured polytetrafluoroethylene)