- 세미나 [08/14] Review of Recent Trend and Study on Reaction Mechanism of Area-Selective Atomic Layer Deposition
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< BK21 플러스 BEST 정보기술 사업단 세미나 개최 안내 >
개최일시 : 2019년 8월 14일 (수) 16:00 ~ 17:00
개최장소 : 제 4공학관 D405호
세미나 제목 : Review of Recent Trend and Study on Reaction Mechanism of Area-Selective Atomic Layer Deposition
Area-selective atomic layer deposition (AS-ALD) offers the advantage of exploiting surface chemistry to deposit a material in a targeted area. Therefore, it may allow a reduction in the number of lithography and etch steps, resulting in lowering of errors in the patterning process as well as a decrease in manufacturing costs. For example, a self-aligned hard mask fabricated by AS-ALD can guide etching of via holes and deposition of metal wires in the metallization process to avoid shorts between metal layers.
In this work, I briefly introduce the basics of AS-ALD from reaction mechanism to recent trend of development. For that, I give an explanation of AS-ALD for Al2O3 thin nanoscale films, as an example. Although Al2O3 has been widely used for ALD, but previous experimental reports showed Al2O3 thin films by using AS-ALD process was not selectively deposited over ~8 nm. In this work, I explain the reaction mechanism of AS-ALD of Al2O3 thin films by a comparative study of Al precursors. Additionally, several series of examples will be presented to overlook the development of AS-ALD trend, such as chemical, experimental, tools, inhibitors, processes, materials of patterns etc. I believe that the study on reaction mechanism and the summary of recent trend in this work will be applied to various applications requiring nanopatterned ALD films.
강연자 성함&직함 / 소속 : 오일권 박사 / Stanford University
초청자 : 전기전자공학과 교수 김형준