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Title
Seminar [08/13] Resonant Tunneling Diodes for THz Applications
Date
2019.08.07
Writer
전기전자공학부
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< BK21+ BEST Seminar Series Announcement> 


Time and Date : 14:00 ~ 15:00 Tuesday 08/14/2019

Place : C616, Engineering Building #3

Title : Resonant Tunneling Diodes for THz Applications
Abstract:
The terahertz wave has many possibilities for high-speed wireless communication, spectroscopic sensing, and non-destructive imaging. Moreover, the recent progress in photonic integration and semiconductor electronic device technology has enabled low-cost and compact solutions for commercial applications of the terahertz technology. The resonant tunneling diode (RTD) is an interesting device due to its negative differential resistance (NDR). The RTD can provide fundamental oscillation over 1THz at room temperature with a simple resonator and directly attached antenna. Moreover, the nonlinearity near the NDR region enables a compact terahertz detector with the same device. We present the recent advances of the RTD-based terahertz transmitter and detector technology. Based on a well-defined equivalent circuit model of the RTD, terahertz circuits such as mixers and oscillators have been integrated into a single chip. Impedance matching of the antenna to the RTD oscillator enhanced radiation and detection efficiencies of the transmitter and the detector, respectively. For sensing and imaging applications, we have developed very compact and easy-to-use discrete THz emitter and detector chips. These devices are produced with the standard semiconductor fabrication processes, and easily assembled in a widely used compact surface-mount package allowing vertical emission and detection of the THz wave. With these, we demonstrated non-destructive imaging and sensing of various materials through obstacles.


Presenter: JaeYoung Kim, Senior Research Engineer/ Rohm Semiconductor, Japan

Host: Prof. Choi, Woo Young, Yonsei EEE