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Title
Seminar [08/14] Review of Recent Trend and Study on Reaction Mechanism of Area-Selective Atomic Layer Deposition
Date
2019.08.07
Writer
전기전자공학부
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< BK21+ BEST Seminar Series Announcement> 


Time and Date : 16:00 ~ 17:00 Wednesday 08/14/2019

Place : D405, Engineering Building #4

Title : Review of Recent Trend and Study on Reaction Mechanism of Area-Selective Atomic Layer Deposition
Abstract:
Area-selective atomic layer deposition (AS-ALD) offers the advantage of exploiting surface chemistry to deposit a material in a targeted area. Therefore, it may allow a reduction in the number of lithography and etch steps, resulting in lowering of errors in the patterning process as well as a decrease in manufacturing costs. For example, a self-aligned hard mask fabricated by AS-ALD can guide etching of via holes and deposition of metal wires in the metallization process to avoid shorts between metal layers.
 In this work, I briefly introduce the basics of AS-ALD from reaction mechanism to recent trend of development. For that, I give an explanation of AS-ALD for Al2O3 thin nanoscale films, as an example. Although Al2O3 has been widely used for ALD, but previous experimental reports showed Al2O3 thin films by using AS-ALD process was not selectively deposited over ~8 nm. In this work, I explain the reaction mechanism of AS-ALD of Al2O3 thin films by a comparative study of Al precursors. Additionally, several series of examples will be presented to overlook the development of AS-ALD trend, such as chemical, experimental, tools, inhibitors, processes, materials of patterns etc. I believe that the study on reaction mechanism and the summary of recent trend in this work will be applied to various applications requiring nanopatterned ALD films.


Presenter: Ilkwon Oh, Postdoctoral Research Fellow, Stanford University

Host: Prof. Kim, Hyung Jun, Yonsei EEE