< BK21+ BEST Seminar Series Announcement> 

Time and Date : 12:00 ~ 13:00 Saturday 09/22/2018

Place : D403, Engineering Building #4

Title : Material challenges and opportunities in next generation electronics: From remote epitaxy to Layer splitting of 2D materials

Abstract:

The current electronics industry has been completely dominated by Si-based devices due to its exceptionally low materials cost. However, demand for non-Si electronics is becoming substantially high because current/next generation electronics requires novel functionalities that can never be achieved by Si-based materials. Unfortunately, the extremely high cost of non-Si semiconductor materials prohibits the progress in this field. I will discuss about our group’s efforts to address these issues. Our team has recently conceived a new crystalline growth concept, termed as “remote epitaxy”, which can copy/paste crystalline information from the wafer remotely through graphene, thus generating single-crystalline films on graphene. These single-crystalline films can be easily released from the slippery graphene surface, and the graphene-coated substrates can be reused infinitely to generate single-crystalline films. Therefore, the remote epitaxy technique can produce expensive non-Si semiconductor films with unprecedented cost efficiency while allowing additional flexible device functionality required for current ubiquitous electronics.

Next, I will discuss about a layer splitting technique which can be a potential solution to overcome the problem which a 2D material society has faced with. A 2D material-based heterostructure has been intensively studied because of its unique device functionalities and novel physics. However, it is extremely challenging to precisely control the layer uniformity in the 2D heterostructures. The splitting technique can produce multiple monolayers of the 2D materials from a single stack with atomic precision. We believe that it suggests the solution for the layer control of the 2D materials, which can lead a new opportunity.

Presenter: Sang-Hoon Bae, Post-doctoral Associate / Research Laboratory of Electronics, Massachusetts Institute of Technology

Host: Prof. Ahn, Jong-Hyun, Yonsei EEE