Prof. Hyun Jae Kim’s research team reported p-type oxide thin-film transistors (TFTs) by hypochlorous acid on Journal of ACS Applied Materials & Interfaces. In this study, solution based p-type oxide TFTs with superior electrical characteristics were achieved by controlling vacancies in oxide channel layer through the reaction with oxygen radicals. Thus, it is expected to be applied to next generation display using the p-type oxide semiconductors.

This research was guided by Prof. Hyun Jae Kim (corresponding author) and led by graduate student Tae Soo Jung (first author).