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연구

Research & Laboratory

제목
세미나 [09/17] InGaAs MOSFETs for Logic Application
작성일
2018.09.13
작성자
전기전자공학부
게시글 내용

< BK21 플러스 BEST 정보기술 사업단 세미나 개최 안내 > 

 

개최일시 : 2018년 9월 17일 월요일 16:00 ~ 17:00

개최장소 : 제4공학관 D403호

세미나 제목 : InGaAs MOSFETs for Logic Application

내용 :

Since early 2000s, indium-rich InxGa1-xAs material system has re-gained its interest, and now stands out as the most promising non-Si n-channel material for next-generation low-power and high-speed nano-scale CMOS for logic applications. This is a consequence of its superior electron carrier transport properties. The room temperature electron mobility of InGaAs is easily in excess of 10,000 cm2/V-sec, depending on indium composition and/or strain. This makes InGaAs very attractive for many different kinds of transistor applications. However, all the efforts on early generation of III-V MOSFETs failed to exhibit accumulation and/or inversion carriers in the channel, due to poor interface state quality between oxide and III-V channel. This makes it challenging to realize a III-V MOSFET for the past 3 decades. Recently, significant progress has been made on a variety of GaAs and InGaAs MOSFETs for several years by using Atomic-Layer-Deposition, so called ALD. This is attributed to excellent interface quality between high-k dielectric and InGaAs channel by ALD. Indeed, many different groups have reported such progresses. In this talk, we review recent progress on InGaAs quantum-well MOSFETs.

 

 

강연자 성함&직함 / 소속 : 김태우 교수 / 울산대학교

초청자 : 전기전자공학과 교수 김형준