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제목
세미나 [01/23] Wafer-Scale Synthesis of Reliable High-Mobility Molybdenum Disulfide Thin Films via Inhibitor-Utilizing Atom
작성일
2018.01.16
작성자
전기전자공학부
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< BK21 플러스 BEST 정보기술 사업단 세미나 개최 안내> 


개최일시 : 2018 년 1월 23일 화요일 16:00 ~ 17:00

개최장소 : 제 2공학관 B038호

세미나 제목 : Wafer-Scale Synthesis of Reliable High-Mobility Molybdenum Disulfide Thin Films via Inhibitor-Utilizing Atomic Layer Deposition

발표 초록 :

A reliable and rapid manufacturing process of molybdenum disulfide (MoS2) with atomic-scale thicknesses remains a fundamental challenge towards its successful incorporation into high-performance nanoelectronics. It is imperative to achieve rapid and scalable production of MoS2 exhibiting high carrier mobility and excellent on/off current ratios simultaneously. Herein we present inhibitor-utilizing atomic layer deposition (iALD) as a novel method to meet these requirements at the wafer-scale. The kinetics of the chemisorption of Mo precursors in iALD is governed by the reaction energy and the steric hindrance of inhibitor molecules. By optimizing the inhibition of Mo precursor absorption, the nucleation on the substrate in the initial stage can be spontaneously tailored to produce iALD-MoS2 thin films with a significantly increased grain size and surface coverage (> 620%). Moreover, highly crystalline iALD-MoS2 thin films, with thicknesses of only a few layers, and excellent room temperature mobility (13.9 cm2 V-1 s-1) and on/off ratios (>108), employed as the channel material in field effect transistors on 6” wafers, are successfully prepared.



강연자 성함&직함 / 소속 : 안지훈 교수 / 한국해양대학교

초청자 : 전기전자공학과 교수 김형준