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세미나 [09/15] High-performance III-V/Si hybrid integration for Si photonics platfor 2017.09.13 35

< BK21 플러스 BEST 정보기술 사업단 세미나 개최 안내 >

 

-개최일시 : 2017 09 15 금요일 10:30 ~ 12:00

-개최장소 : 2공학관 701

-세미나 제목: High-performance III-V/Si hybrid integration for Si photonics platform

-발표초록 :

Although Si photonics allow us to realize high-performance photonic integrated circuits (PICs) thanks to the large difference of the refractive index between Si and SiO2, the performance of active devices has remained at low levels due to the band structure of Si; thus, it is difficult to make extremely low-power-consumption and high-performance device [1,2]. To overcome this limitation of Si photonics, III-V materials are a promising solution owing to their superior optical properties. Although there are many candidates for realizing PICs using III-V materials [3,4], a III-V/Si hybrid integration for a Si photonics platform is a powerful technique which has the merits of both of Si photonics and III-V materials. For example, over the past 10 years, III-V/Si hybrid lasers have been developed to integrate a light source using high-performance III-V quantum well or quantum dot laser on Si waveguide [5]. Recently, we have developed a new application of this III-V/Si hybrid structure for the efficient phase modulation with low loss using III-V/Si hybrid MOS structure [6]. This structure allows us to realize more efficient phase modulator with low loss owing to the large electron-induced refractive index change of III-V material; thus, using this structure, we can break through the trade-off relationship of Si optical modulators. In this presentation, I will discuss the recent progress in the III-V/Si hybrid integration for a Si photonics platform, especially III-V/Si hybrid MOS optical modulators and Si hybrid lasers.

 

 

-강연자 : 한재훈 박사 (KIST 차세대반도체연구소 광전소재연구단)

-초청자 : 전기전자공학과 교수 최우영

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